Dual-flag stacked die package

ABSTRACT

In one embodiment, a semiconductor package includes a first and a second die flag, wherein the first and second die flags are separated by a gap. First and second metal oxide semiconductor field effect transistor (MOSFET) die are on the first and the second die flags, respectively. A power control integrated circuit (IC) is stacked on top of at least one of the first or the second MOSFET die. A mold compound is encapsulating the power control IC, the first and second MOSFET die, and the first and second die flags.

BACKGROUND OF THE INVENTION

Embodiments disclosed in the present invention relate generally toelectrical technology, and more specifically to a semiconductorcomponent and method of fabricating the same.

For certain applications it is desirable to package multiplesemiconductor integrated circuits (IC's), components, chips or die in asingle package. For example, in a battery protection circuitapplication, a power control IC and two metal oxide semiconductor fieldeffect transistors (MOSFETs) are packaged together in a lead framepackage. The best performance for the battery protection package isachieved by using the largest possible MOSFET size to minimize the drainto source turn-on resistance (R_(ds-on)). However, a smaller overallsize of the packaged IC's is desirable to accommodate ever shrinkingelectronic devices. To achieve a smaller footprint for multiple die in asingle package, the die have been stacked on each other where possible.

Stacking of die on each other does, however, create challenges in themanufacturing and reliability of the package. In addition, along withthe demands to shrink electronic devices there is also an ever presentdemand to improve the manufacturing of any integrated circuit packages.Accordingly, it would be desirable to develop a stacked die packagehaving improved manufacturability and reliability.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a top view of a dual flag stacked die package in accordancewith an embodiment of the present invention;

FIG. 2 is a cross-sectional view along a section 2-2 of the dual flagstacked die package of FIG. 1; and

FIG. 3 is a top view of a dual flag stacked die package in accordancewith another embodiment of the present invention.

For simplicity and clarity of illustration, elements in the figures arenot necessarily drawn to scale, and the same reference numbers indifferent figures denote generally the same elements. Additionally,descriptions and details of well-known steps and elements may be omittedfor simplicity of the description.

DETAILED DESCRIPTION OF THE DRAWINGS

Embodiments of the present invention provide packaged integratedcircuits with better performance, smaller form factor and a superiorpin-out arrangement and with improved manufacturability and reliability.The dual flag stacked die package may be utilized in a batteryprotection IC application to protect, for example a lithium-ion orlithium polymer battery cell. In an embodiment of the present invention,a power control IC is stacked on top of two separate MOSFET die on twoseparate flags or die pads. The two flags or die pads are easier toboard mount than a single, large flag. A large, single flag or die padused when two MOSFETs are integrated on to a single die in the past ismuch more difficult to board mount. This is due to the fact that whenmounting a package to a circuit board, an electronic component having asingle, large flag, the large footprint of the flag causes theelectronic component to move or float in an uncontrollable manner. Thismovement while board mounting makes it difficult to control thealignment of the package pin connection to the solder of the circuitboard. Thus, the package of the past caused more difficulties inmanufacturing end products. In addition a large, single die flag used inthe past creates mold flow issues. The mold flow problems can createreliability issues for the package. As will be set forth below, thisinvention solves these manufacturability and reliability issues of thepast by providing the two MOSFET die each on their own die flag with agap between each die flag.

FIG. 1 illustrates a top view of a dual flag stacked die package 100 inaccordance with a first embodiment of the invention. In one embodiment,package 100 is a battery protection IC package and includes two separatedie 306 and 308 having MOSFETs formed therein placed on or attached toseparate die flags or pads 300 and 301 with a gap 200 in between the dieflags 301 and 300, respectively. In one embodiment, the two MOSFET die306 and 308 are of equal size. As shown in FIG. 1, two MOSFET die 306and 308, each fabricated on physically separate semiconductor chips, mayhave the substantially the same source 218 and 220 size and gate 214 and212 size and are attached onto a die flag 301 and die flag 300. Die flag301 and 300 are physically separate flags. The source (218 and 220) andgate (214 and 212) layout of the MOSFET die 306 and 308 may be placed sothat they are symmetric along the centerline of the MOSFET die 306 and308. A power control IC 302 is stacked on top of the two MOSFET die 306and 308 and in this embodiment, overlaps both portions of the sourceareas 218 and 220 of MOSFET die 306 and 308 but not the gate areas 212and 214.

In a battery protection application, input pad 224 formed on the powercontrol IC 302 is electrically coupled to the supply voltage pin or lead324 through a bonding wire 313. Supply voltage pin 324 may be connectedto the anode of a battery through a resistor (not shown). Input pad 226formed on the power control IC 302 is electrically coupled to thevoltage monitor pin 326 through a bonding wire 312. Ground pins 320 maybe electrically coupled to the cathode (not shown) of the battery and inthis embodiment are positioned on the right side of package 100 and areelectrically coupled to the source pad 220 of MOSFET 308, preferablythrough multiple bonding wires 322. In this embodiment MOSFET 308 servesas an internal discharge MOSFET. A ground pad 120 of power control IC302 is electrically coupled to the source pad 220 of the MOSFET 308through a bond wire 316. Output pad 112 of the power control IC 302 iselectrically coupled to gate pad 212 of MOSFET 308 through bond wire 315to enable or disable the battery protection IC to discharge. Output pad114 of the power control IC 302 is electrically coupled to gate pad 214of MOSFET 306 through bond wire 314 to enable or disable the batteryprotection IC to charge. Source pad 218 of the MOSFET 306 may beelectrically coupled to coupled leads or pins 318, preferably throughmultiple bond wires 310.

In this embodiment, the distance between bonding wires 310 and thedistance between the bonding wires 322 are spaced apart therebyproviding lower electrical resistance. The bond wires disclosed abovemay be made of a suitable metal including, but not limited to, gold(Au), copper (Cu) or aluminum (Al). The gate metal pads 212 and 214 andsource metal pads 218 and 220 are preferably of 3-5 micron thickaluminum on each of the two MOSFET die 306 and 308 and are located on aportion of the top surface of the MOSFET die 306 and 308. Alternatively,the source pads 218 and 220 of two MOSFET die 306 and 308 may beelectrically coupled to the coupled leads 318 and coupled leads 320through aluminum ribbons (not shown) instead of bond wires. Aluminumribbons are known alternatives to multiple bond wires.

An undesirable effect of stacking two die over each other is an increaseof package 100 thickness which could limit the scope of application oreven render the resulting device useless. To reduce the overallthickness of the package 100, thinner die less than standard 8 mils maybe used. Preferably the die thickness for both IC 302 and the MOSFET die306 and 308 is less than 6 mils. The reduced thickness of MOSFET die 306and 308 further reduce the turn-on resistances of the MOSFET die 306 and308.

FIG. 2 is a simplified, cross-sectional view of the dual flag stackeddie package 100 of FIG. 1 along section 2-2. To avoid cluttering FIG. 2,all of the elements shown in FIG. 1 are not shown. FIG. 2 shows thedrain metal pads 116 and 118 of the two MOSFET die 306 and 308,respectively, which are located on the bottom surface of the MOSFET die306 and 308 and may be comprised of about 1 to 3 microns of TiNiAg. Thedrain pads 116 and 118 of the two MOSFET die 306 and 308 areelectrically coupled to the lead frame die flag 301 and die flag 300through an electrically conductive bonding agent 303, which can be softsolder, electrically conductive epoxy and other electrically conductiveadhesive.

An insulating adhesive layer 304, such as an electrically non-conductiveepoxy layer is formed between the power control IC 302 and the top ofthe two MOSFET die 306 and 308. The insulating adhesive layer 304 notonly provides mechanical bonding between the power control IC 302 andMOSFET die 306 and 308, but also serves as an electrical insulatingbarrier because there exists an electrical potential difference betweenthe power control IC 302 and MOSFET die 306 and 308 that will causedevice malfunction if not insulated properly.

Traditional epoxy dispensing and die attaching in IC packaging may notprovide adequate insulation between sources of MOSFET die 306 and 308and power control IC 302. To ensure proper insulation, special steps maybe followed to form a high quality insulation layer 304. In oneembodiment, a non-conductive epoxy such as Ablesbond 8006NS or Ablecoat8008NC from Abelstik Laboratories of Rancho Dominguez, Calif., is coatedon the backside of power control IC 302 in wafer form, and then halfcured in an oven. Power control IC 302 with half cured back coated epoxyis diced and attached onto the MOSFET 306 and 308 at elevatedtemperature and then fully cured. In another embodiment, a secondnon-conductive epoxy is applied to the top surface of MOSFET die 306 and308 before the power control IC die 302 is coated with a first layer ofnonconductive epoxy attached thereon. In another embodiment the twoMOSFET die 306 and 308 further include a passivation layer (not shown)formed atop the source for further insulation.

A mold compound 405 is formed to encapsulate the power control IC 302,MOSFET die 306 and 308, as well as around die flags 301 and 300. Gap 200is preferably wide enough to allow mold compound 405 to flow into gap200 to enhance the bonding of mold compound 405 around die flags 301 and300. The enhanced bonding of mold compound 405 around the die flags 301and 300 in the gap 200 improves the reliability of package 100.

In the packages manufactured in the past, the single, large flag tendedto create mold flow imbalance between the top half and the bottom halfof the package. This mold flow imbalance could result in incompletefills with resulting voids in the mold compound of the package. Thevoids cause reliability issues because moisture may be allowed topenetrate the package and affect the electronic components.

The package 100 of the present invention solves this problem byincluding two separate die flags 301 and 300 with a gap 200. Gap 200allows more of a path for mold compound 405 to fill the volume aroundpower control IC 302, MOSFET die 306 and 308, as well as around dieflags 301 and 300. This allows for a wider mold process parameter windowto be utilized in manufacturing which results in improved consistency inthe quality of packages 100 manufactured in a production setting. Thewider mold process parameters able to be utilized in the presentinvention include, for example, faster transfer speed of the moldcompound 405, wider temperature range during encapsulation, andincreased flexibility in selection of materials comprising mold compound405.

Although the present invention requires the use of smaller die size ofMOSFET die 306 and 308 (which results in increased R_(ds-on)) due to thesmaller overall flag area available for the same package 100 size, theincrease in R_(ds-on) is small enough that a package 100 manufactured inaccordance with the present invention is able to meet customerspecifications.

In one embodiment, mold compound 405 is typically comprised of aMulti-Aromatic-Resin (MAR) or Orth-Cresol-Novolac (OCN) resin, and gap200 is preferably between 100 and 300 microns in thickness. Mostpreferably, gap is less than 200 microns in order to minimize theoverall length of package 100 from lead to lead or the decrease in sizeof MOSFET die 306 and 308. In order to minimize the size of gap 200 (andthe resultant effect on the overall package size or MOSFET die size), itis preferable to use mold compounds 405 with relatively small fillersize less than the width of gap 200 and having a spherical shape.However, the width of gap 200 may be increased to allow more irregularshaped and/or larger filler sized mold compound 405. In one embodiment,the filler size of mold compound 405 is less than the width of the gap200, but more preferably the average filler size is less than one halfthe width of the gap 200. In another embodiment, if gap 200 has a widthof approximately 200 microns, it is preferred that the filler size ofmold compound 405 be approximately 75 microns.

Die flags 300 and 301 are electrically coupled together, preferably at anext level in the assembly which is not part of package 100, but part ofa printed circuit board (not shown) to which package 100 is mounted. Inone embodiment, die flags 300 and 301 are electrically coupled togetherthrough an electrically conductive layer 401 in order to electricallycouple drain pads 116 and 118. In an alternate embodiment, electricallyconductive layer 401 may be comprised of two physically separate layers(not shown) instead of a single layer and the two physically separateelectrically conductive layers 401 are electrically coupled through theprinted circuit board itself. Electrically conductive layer(s) 401 istypically comprised of copper with a coating to protect it fromoxidation, such as a tin solder. Conductive layer 401 may be in the formof a solder paste that is stenciled or squeegeed on to a circuit board(not shown).

As has been stated previously, one advantage of the present invention isthat two flags or die pads 300 and 301 are easier to board mount than asingle, large flag used in the past. This is due to the fact that whenboard mounting a package having a single, large flag, the largefootprint of the single flag causes the electronic component to move orfloat in an uncontrollable manner. This movement while mounting apackage onto a circuit board makes it difficult to control the packagepin connection solder alignment. In contrast, the fact that flags 300and 301 of the present invention are broken up by a section of moldcompound 405 therebetween increases the surface tension and minimizesthe movement or floating while board mounting package 100. Thus, thepackage 100 of the present invention is more manufacturable whichincreases the yield of end product manufactured on a printed circuitboard. Referring back to FIG. 1 and FIG. 2, it should be readilyapparent that, in another embodiment of the present invention, for abattery protection IC application, leads or pins 324 and 320 may be onthe left side of package 100 and leads 326 and 318 may be on the rightside of package 100 with MOSFET 306 and 308 moved from left to right andcorresponding input pads of power control IC 302 and gate pads 214 and212 of MOSFET die 306 and 308 also moved from left to right on therespective die, thus providing essentially a mirror image along a lineperpendicular to line 2-2. As can be appreciated by designers ofintegrated circuits, pad locations on power control IC 302 and twoMOSFET die 306 and 308 may be different than that shown in FIG. 1.

FIG. 3 is a top view of alternative dual flag stacked die package 100with two discrete MOSFET die 317 and 319 of unequal size on a die flag801 and 800 with a gap 201 between die flags 801 and 800. Elements whichare the same of the embodiment shown in FIGS. 1 and 2 are referenced bythe same number. In the embodiment shown, a first MOSFET 317 is smallerthan a second MOSFET 319. In FIG. 3, leads 324 and 320 are on the rightside of package 100, and leads 326 and 318 are on the left side ofpackage 100. As shown in FIG. 3, in this embodiment, a power control IC302 is stacked only on the MOSFET 319 in such a way that a long side ofthe power control IC 302 is parallel to a long side of the MOSFET 319.As is readily apparent, power control IC 302 may be of differentdimensions and placed over MOSFET 319, if rectangular, having either thelong or short side be perpendicular to the long side of MOSFET 319. Itis also readily apparent that MOSFET 317 can be placed on the right sideand MOSFET 319 can be placed on the left (not shown) with pads of boththe power IC 302 and the MOSFET die 317 and 319 positioned toaccommodate the electrical coupling between power IC 302 and MOSFET die317 and 319 and leads 324, 320, 326, and 318 as described above withreference to FIG. 1, but the respective leads being a mirror image ofthat shown in FIG. 3. Furthermore, power control IC 302 may be placedover a portion of both MOSFET die 317 and 319 as well.

From all of the foregoing, one skilled in the art can determine thataccording to one embodiment a semiconductor package structure (forexample, element 100) includes a first and second die flags (forexample, elements 300 and 301, 800 and 801), wherein the first andsecond die flags are separated by a gap (for example, elements 200,201). A first and second metal oxide semiconductor field effecttransistor (MOSFET) die (for example, elements 306 and 308, 317 and 319)are on the first and the second die flags, respectively. A power controlintegrated circuit (IC) (for example, element 302) is stacked on top ofat least one of the first or the second MOSFET die. A mold compound (forexample, element 405) encapsulates the power control IC, the first andsecond MOSFET die, and the first and second die flags.

Those skilled in the art will also appreciate that according to anotherembodiment, the structure described in paragraph [0022] further includesthe gap having a width between 100-300 microns.

Those skilled in the art will also appreciate that according to anotherembodiment, the structure described in paragraph [0022] further includesa mold compound comprised of a filler material having an average sizeless than one half the width of the gap.

Those skilled in the art will also appreciate that according to anotherembodiment, a dual flag stacked die package (for example, element 100)includes first and second physically separate die flags (for example,elements 300 and 301, 800 and 801), wherein the first and second dieflags are separated by a gap (for example, elements 200, 201). First andsecond metal oxide semiconductor field effect transistor (MOSFET) die(for example, elements 306 and 308, 317 and 319) are mounted on andelectrically coupled to the first and the second die flags,respectively. A power control integrated circuit (IC) (for example,element 302) is vertically mounted on top of at least one of the firstor the second MOSFET die through a nonconductive epoxy (for example,element 304). A mold compound (for example, element 405) is disposedaround the power control IC, the first and second MOSFET die, the firstand second die flags, and disposed in the gap.

Those skilled in the art will also appreciate that according to stillanother embodiment, a method of making a semiconductor package (forexample, element 100) includes providing a first and a second die flag(for example, elements 300 and 301, 800 and 801), wherein the first andsecond die flags are separated by a gap (for example, elements 200,201). The method includes attaching first and second metal oxidesemiconductor field effect transistor (MOSFET) die (for example,elements 306 and 308, 317 and 319) on the first and the second dieflags, respectively. The method includes placing a power controlintegrated circuit (IC) (for example, element 302) on top of at leastone of the first or the second MOSFET die. The method includesencapsulating the power control IC, the first and second MOSFET die, andthe first and second die flags with a mold compound (for example,element 405).

Those skilled in the art will also appreciate that according to anotherembodiment, the method described in paragraph [0026] further includesencapsulating with a mold compound comprised of a filler material havingan average size less than one half the width of the gap.

In view of all the above, it is evident that a novel structure andmethod is disclosed. Included, among other features, are first andsecond separate die flags, wherein the first and second die flags areseparated by a gap. First and second metal oxide semiconductor fieldeffect transistor (MOSFET) die are on the first and the second dieflags, respectively. In one embodiment, the MOSFET die are substantiallyequal in size. A power control integrated circuit (IC) is stacked on topof at least one of the first or the second MOSFET die. In anotherembodiment, the power control IC is stacked on both MOSSFET die. A moldcompound is encapsulating the power control IC, the first and secondMOSFET die, and the first and second die flags. In another embodiment,the package is a battery protection IC package. The package and methodincreases manufacturability and reliability while still providing for apackage structure with a smaller footprint.

While the subject matter of the invention is described with specificpreferred embodiments and example embodiments, the foregoing drawingsand descriptions thereof depict only typical embodiments of the subjectmatter, and are not therefore to be considered limiting of its scope. Itis evident that many alternatives and variations will be apparent tothose skilled in the art.

As the claims hereinafter reflect, inventive aspects may lie in lessthan all features of a single foregoing disclosed embodiment. Thus, thehereinafter expressed claims are hereby expressly incorporated into thisDetailed Description of the Drawings, with each claim standing on itsown as a separate embodiment of the invention. Furthermore, while someembodiments described herein include some but not other featuresincluded in other embodiments, combinations of features of differentembodiments are meant to be within the scope of the invention, and formdifferent embodiments, as would be understood by those skilled in theart.

1. A semiconductor package, comprising: first and second die flags,wherein the first and second die flags are separated by a gap; first andsecond metal oxide semiconductor field effect transistor (MOSFET) die onthe first and the second die flags, respectively; a power controlintegrated circuit (IC) stacked on top of at least one of the first orthe second MOSFET die; a mold compound encapsulating the power controlIC, the first and second MOSFET die, and the first and second die flags.2. The semiconductor package of claim 1 wherein the gap between thefirst and the second die flag is approximately between 100 and 300microns.
 3. The semiconductor package of claim 1 wherein the gap betweenthe first and the second die flag is less than 200 microns.
 4. Thesemiconductor package of claim 1 wherein the mold compound is disposedbetween the gap thereby improving reliability of the semiconductorpackage, and wherein the bottom surface of the mold compound in the gapis substantially coplanar with the bottom surface of the first andsecond die flags.
 5. The semiconductor package of claim 1 wherein themold compound is comprised of a filler material including an averagesize of materials less than one half the width of the gap.
 6. Thesemiconductor package of claim 1 wherein the mold compound is comprisedof a filler material having a spherical shape.
 7. The semiconductorpackage of claim 1 wherein the power control IC is electrically coupledto a first and second lead and the first MOSFET die is electricallycoupled to a third lead and the second MOSFET die is electricallycoupled to a fourth lead.
 8. The semiconductor package of claim 7wherein the first MOSFET die is electrically coupled to a fifth lead andthe second MOSFET die is electrically coupled to a sixth lead.
 9. Thesemiconductor package of claim 1 wherein the first and the second dieflags are electrically coupled.
 10. The semiconductor package of claim 1wherein the power control IC is electrically coupled to a gate of thefirst MOSFET and a gate and a source of the second MOSFET.
 11. A dualflag stacked die package, comprising: first and second physicallyseparate die flags, wherein the first and second die flags are separatedby a gap; first and second metal oxide semiconductor field effecttransistor (MOSFET) die mounted on and electrically coupled to the firstand the second die flags, respectively; a power control integratedcircuit (IC) vertically mounted on top of at least one of the first orthe second MOSFET die through a nonconductive epoxy; a mold compoundencapsulating the power control IC, the first and second MOSFET die, thefirst and second die flags, and disposed in the gap, wherein the bottomsurface of the mold compound in the gap is substantially coplanar withthe bottom surface of the first and second die flags.
 12. The dual flagstacked die package of claim 11 wherein the gap between the first andthe second die flag is approximately between 100 and 300 microns. 13.The dual flag stacked die package of claim 11 wherein the gap betweenthe first and the second die flag is less than 200 microns.
 14. The dualflag stacked die package of claim 11 wherein the power control IC iselectrically coupled to a first and second lead and the first MOSFET dieis electrically coupled to a third and fourth lead and the second MOSFETdie is electrically coupled to a fifth and sixth lead.
 15. The dual flagstacked die package of claim 11 wherein the mold compound is comprisedof a filler material including an average size of materials less thanone half the width of the gap.
 16. The dual flag stacked die package ofclaim 11 wherein the mold compound is comprised of a filler materialhaving a spherical shape.
 17. A method of making a semiconductorpackage, comprising: providing a first and a second die flag, whereinthe first and second die flags are separated by a gap; attaching firstand second metal oxide semiconductor field effect transistor (MOSFET)die on the first and the second die flags, respectively; placing a powercontrol integrated circuit (IC) on top of at least one of the first orthe second MOSFET die; encapsulating the power control IC, the first andsecond MOSFET die, and the first and second die flags with a moldcompound.
 18. The method of making the semiconductor package of claim 17wherein the gap between the first and the second die flag is less than200 microns.
 19. The method of making the semiconductor package of claim17 wherein the step of encapsulating further comprises the mold compoundbeing formed between the gap thereby improving reliability of thesemiconductor package, and wherein the bottom surface of the moldcompound in the gap is substantially coplanar with the bottom surface ofthe first and second die flags.
 20. The method of making thesemiconductor package of claim 17 wherein the step of encapsulatingfurther comprises the mold compound being comprised of filler materialhaving an average size of materials less than one half the width of thegap.